Professor Peter J Goodhew
Papers on Semiconductors
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Papers on growth and characterisation of III-V semiconductors:
| No | Authors | Title | Journal |
| 1 | U Bangert, P Charsley, R Dixon, DA Faux, PJ Goodhew,A Harvey, KP Homewood, M Emeny & CR Whitehouse | Strain transfer between GaAs/InGaAs strained layers | Proc Microscopy of Semiconducting Materials, Oxford 1989,IoP Conf Ser Vol 100, 287-291 (1989) |
| 2 | PJ Goodhew, R Dixon, A Colclough, KP Homewood, M Emeny & CR Whitehouse | Plan view microscopy of strained layer superlattices | Proc Microscopy of Semiconducting Materials, Oxford 1989,IoP Conf Ser Vol 100, 325-330 (1989) |
| 3 | R H Dixon, P Kidd, PJ Goodhew, MT Emeny & CR Whitehouse | The structure of strained-layer wells in InGaAs/GaAs | Proc EMAG 89, IoP Conf Series Vol 98, 407-410 (1990) |
| 4 | U Bangert, P Charsley, DA Faux, PJ Goodhew & AJ Harvey | The use of diffraction contrast near heterostructure interfaces todetermine the strain field | Proc EMAG 89, IoP Conf Series Vol 98, 423-426 (1990) |
| 5 | RH Dixon, P Kidd & PJ Goodhew | Defect morphology in thick relaxed layers of InGaAs on GaAs | Proc XII Int Cong EM, Seattle 4 668-9 (1990) |
| 6 | RH Dixon & PJ Goodhew | On the origin of misfit dislocations in InGaAs/GaAs strained layers | J Appl Phys 68 3163-8 (1990) |
| 7 | P Kightley, PJ Goodhew, RR Bradley & PD Augustus | A mechanism of misfit dislocation reaction for GaInAs strained layers grown on off-axis GaAs substrates | J Cryst Growth 112 359-367 (1991) |
| 8 | V Higgs, P Kightley, PJ Goodhew & PD Augustus | Metal-induced dislocation nucleation for metastable SiGe/Si | Appl Phys Lett 59 829-31 (1991) |
| 9 | PJ Goodhew & P Kightley | The creation of misfit dislocations: A study of InGaAs alloys on GaAs substrates | Evolution of thin-film and surface microstructure (MRS) 202 (1991) 501-506 |
| 10 | P Kightley & PJ Goodhew | Interfacial dislocation arrays for on and off-axis epitaxy of InGaAs | Microscopy of Semiconducting Materials Inst Phys Conf Ser 117 (1991) 515-518 |
| 11 | P Kightley, CJ Kiely & PJ Goodhew | Contrast effects in strained layer InGaAs/GaAs superlattices | Microscopy of Semiconducting Materials Inst Phys Conf Ser 117 (1991) 595-8 |
| 12 | P Kightley, G Aragon-Herranz, PJ Goodhew & RC Pond | Dislocation dipoles in strained InGaAs layers grown on GaAs | Microscopy of Semiconducting Materials Inst Phys Conf Ser 117 (1991) 603-6 |
| 13 | Z Jamal & PJ Goodhew | Measurement of threading dislocation density in GaAs substrates using a large area TEM technique | Inst Phys Conf Series 119 (1991) 229-232 |
| 14 | P Kightley, PJ Goodhew, PD Augustus & RR Bradley | Observations of the solid phase epitaxial regrowth for GaAs/Si | Proc MRS Fall Meeting 1991:Thin films: stress and mechanical properties 239 (1992) 443-448 |
| 15 | P Kightley, V Higgs & PJ Goodhew | The generation and optical activity of misfit dislocations by very low level transition metal contamination of SiGe/Si | Proc MRS Fall Meeting 1991:Thin films: stress and mechanical properties 239 (1992) 401-406 |
| 16 | P Kightley, PJ Goodhew & R Beanland | The interactions between misfit dislocations in InGaAs/GaAs interfaces | Proc MRS Fall Meeting 1991:Thin films: stress and mechanical properties 239 (1992) 413-418 |
| 17 | PJ Goodhew, T Farrell, R Beanland & P Kightley | Defects in photo-assisted CBE-grown GaAs | "The Physics of Semiconductors" Ed P Jiang & H-Z Zheng Vol 1, 578-581 (1992) 21st Int Conf Physics of Semiconductors, Beijing August 1992 |
| 18 | YR Xing, CJ Kiely & PJ Goodhew | GaAs grown on Si by chemical beam epitaxy | Proc MRS Fall Meeting 1992 |
| 19 | YR Xing, RW Devenish, TBF Joyce, CJ Kiely, TJ Bullough & PJ Goodhew | A high resolution transmission electron microscopy(HRTEM) study of a GaAs/Si heterostructure grown by chemical beam epitaxy (CBE) | Appl Phys Lett 60, 616-8 (1992) |
| 20 | TBF Joyce, TJ Bullough, P Kightley, CJ Kiely, YR Xing & PJ Goodhew | The CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors | J Cryst Growth 120, 206-211 (1992) |
| 21 | JV Armstrong, T Farrell, TB Joyce, P Kightley, TJ Bullough & PJ Goodhew | Monitoring real time CBE growth of GaAs and GaAlAs using dynamical optical reflectivity | J Cryst Growth 120 84-87 (1992) |
| 22 | T Farrell, JV Armstrong, TB Joyce, P Kightley, TJ Bullough & PJ Goodhew | XeCl excimer laser assisted CBE growth of GaAs | J Cryst Growth 120 395-398 (1992) |
| 23 | D Sun, R Beanland, TBF Joyce, JV Armstrong, TJ Bullough & PJ Goodhew | Orientation and morphology of Al layers grown on GaAs by chemical beam epitaxy | J Cryst Growth 132 (1993) 592-598 |
| 24 | YR Xing, Z Jamal, TBF Joyce, TJ Bullough & PJ Goodhew | Growth of high quality gallium arsenide on HF-etched silicon (001) by chemical beam epitaxy | Appl Phys Lett 62 (1993) 1653-5 |
| 25 | T Farrell, JV Armstrong, R Beanland, TJ Bullough, TB Joyce & PJ Goodhew | Microstructure of GaAs grown by excimer laser assisted chemical beam epitaxy | Semiconductor Science & Technology 8 (1993) 1112-1117 |
| 26 | T Farrell, JV Armstrong, TJ Bullough, R Beanland, TB Joyce & PJ Goodhew | Surface morphology of photo-assisted chemical beam epitaxial growth of GaAs | J Cryst Growth 127 (1993) 148-151 |
| 27 | DJ Dunstan, RH Dixon, P Kidd, LK Howard, VA Wilkinson,JD Lambkin, C Jeynes, MP Halsall, D Lancefield, MT Emeny, PJ Goodhew, KP Homewood, BJ Sealy & AR Adams | Growth and characterization of relaxed epilayers of InGaAs on GaAs | J Crystal Growth 126 (1993) 589-600 |
| 28 | PJ Goodhew, R Beanland & T Farrell | Defects in photo-assisted CBE-grown GaAs | Proc MRS Fall Meeting 1992, Chemical perspectives of microelectronic materials 282 (1993) 39-44 |
| 29 | Z Jamal & PJ Goodhew | Disordering of a short-period GaAs-AlGaAs superlattice by C diffusion | Proc MRS Fall Meeting 1992,Chemical perspectives of microelectronic materials 282 (1993) 145-150 |
| 30 | RT Murray, CJ Kiely, PJ Goodhew & M Hopkinson | Electron microscopy studies of InGaAlAs layers grown on InP (001) by molecular beam epitaxy | Proc EMAG 93, Inst Phys Conf Series 138 (1993) 309-312 |
| 31 | R Beanland & PJ Goodhew | Principles of the measurement of composition and strain in epitaxial layers using convergent beam electron diffraction | Proc EMAG 93 Inst Phys Conf Series 138 (1993) 179-182 |
| 32 | Z Jamal & PJ Goodhew | Interdiffusion enhancement in AlGaAs/GaAs superlattices in the presence of carbon | Defect-Interface Interactions, Ed E P Kvam et al (Proc MRS Fall meeting 1993), 319 (1994) 105-110 |
| 33 | Z Jamal & PJ Goodhew | TEM studies of impurity-induced defects in GaAs grown by CBE | Defect-Interface Interactions, Ed E P Kvam et al (Proc MRS Fall meeting 1993), 319 (1994) 117-122 |
| 34 | R Beanland, DJ Dunstan & PJ Goodhew | Predicting relaxation in strained epitaxial layers | Scanning Microscopy: Toronto, Canada, 8 (1994) 859-868 |
| 35 | G MacPherson, R Beanland, PJ Goodhew, P Kidd, A Sacedon, F Gonzalez, L Gonzalez & Y Gonzalez | A study of the distribution of dislocation spacings in a strained epitaxial interface | Proc 13th Int Cong EM, Paris 1994, 2A (1994) 157-158 |
| 36 | A Sacedon, MA Sanchez-Garcia, A L Alvarez, F Gonzalez-Sanz, E Calleja, R Beanland, G MacPherson, PJ Goodhew, D Araujo, R Garcia, D J Dunstan & P Kidd | Relaxation behaviour of InGaAs layers grown by MBE on GaAs substrates | Barcelona Semiconductor Materials conference, 1994 |
| 37 | A Sacedon, F Calle, AL Alvarez, E Calleja, E Munoz, R Beanland & PJ Goodhew | Relaxation of InGaAs layers grown on (111)B GaAs | Appl Phys Lett 65 (1994) 1-4 |
| 38 | PJ Goodhew | Dislocation behaviour at heterointerfaces in III-V semiconductors | J Phys Chem Solids, 55 (1994) 1107-1114 |
| 39 | G MacPherson, R Beanland, PJ Goodhew | On the development of misfit dislocation distributions in strained epitaxial layer interfaces | Scripta Met & Mat 33 (1995) 123-128 |
| 40 | R Beanland, M Aindow, TB Joyce, P Kidd, M Lourenco & PJ Goodhew | A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy | J Cryst Growth 149 (1995) 1-11 |
| 41 | R Beanland & PJ Goodhew | Comment on "Multiplication of misfit dislocations in InxGa1-xAs/GaAs heterostructures | Submitted to Phil Mag Jan 1995 |
| 42 | D S Schmool, T Farrell, J Rumberg, K Stahrenberg, W Richter, PJ Goodhew & PT Weightman | Dynamic Reflectance Anisotropy Spectroscopy Growth Studies of GaAs (001) by Chemical Beam Epitaxy | Submitted to ...(1995) |
| 43 | TB Joyce, TL Pfeffer, TJ Bullough, G Petkos, PJ Goodhew & AC Jones | The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy | J Cryst Growth 150 (1995) 644-648 |
| 44 | G MacPherson, PJ Goodhew & R Beanland | A model for the distribution of misfit dislocations near epitaxial layer interfaces | Phil Mag 72 (1995) 1531-1545 |
| 45 | G Macpherson, R Beanland & PJ Goodhew | A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers | Phil Mag 73 (1995) 1439-1450 |
| 46 | G Macpherson , R Beanland & PJ Goodhew | The possibility of low edge dislocation densities in InGaAs/GaAs step-graded layers | 9th Int Conf Microscopy of Semiconducting Materials" Oxford March 1995, Inst Phys Conf Ser 146 (1996) 215-218 |
| 47 | RT Murray, CJ Kiely, M Hopkinson & PJ Goodhew | Crack formation in tensile strained III-V epilayers grown on (001) InP substrates | 9th Int Conf Microscopy of Semiconducting Materials" Oxford March 1995, Inst Phys Conf Ser 146 (1996) 207-210 |
| 48 | G Macpherson , S Sajip & PJ Goodhew | An AFM and TEM study of InGaAs/GaAs step-graded layers grown by a novel design method for the reduction of edge dislocation densities | Proc EMAG 95, Inst Phys Conf Ser 147 (1995) 243-246 |
| 49 | G Macpherson & PJ Goodhew | Analysis of the distribution of misfit dislocations in InGaAs/GaAs single layers | Proc EMAG 95, Inst Phys Conf Ser 147 (1995) 381-384 |
| 50 | RT Murray, CJ Kiely, PJ Goodhew and M Hopkinson | Composition fluctuations in strained InGaAlAs layers grown on (001) InP | Proc EMAG 95, IoP Conf Ser 147 (1995) 373-376 |
| 51 | G MacPherson & PJ Goodhew | Low edge dislocation densities in step-graded structures | Electron Mic Soc of South Africa, Proceedings 25 (1995) 7 |
| 52 | TB Joyce, SP Westwater, PJ Goodhew & RE Pritchard | Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the applications of in-situ monitoring | J Cryst Growth 164 (1995) 371-376 |
| 53 | GM Petkos, PJ Goodhew & TB Joyce | Sulphur doping of InGaAs using diethylsulphide (DES) | J Cryst Growth 164 (1995) 415-419 |
| 54 | G MacPherson & PJ Goodhew | The possibility of GaAs substrates with ultra-low threading dislocation densities | Proc MRS Fall meeting 1996 in Defects and Interfaces in Lattice-Mismatched Semiconductor Heterostructures |
| 55 | EC Paloura, G Petkos, PJ Goodhew, B Theys & J Chevallier | S-doped GaInAs grown by chemical beam epitaxy: electrical and structural characterisation | MRS Symp Proc Vol 442 (1997)523-528 |
| 56 | G MacPherson & PJ Goodhew | A refined model for threading dislocation filtering in InxGa1-xAs/GaAs epitaxial layers | MRS Fall meeting 1996 MRS Symp Proc 442 (1997) 473 |
| 57 | R Beanland, DJ Dunstan & PJ Goodhew | Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Review | Advances in Physics 45 (1996) 87-146 |
| 58 | G MacPherson & PJ Goodhew | A refined scheme for the reduction of threading dislocation densities in InxGa1-xAs/ GaAs epitaxial layers | J Appl Phys 80 (1996) 6706-6710 |
| 59 | P Kidd, DJ Dunstan, HG Colson, MA Lourenco, A Sacedon,F Gonzalez-Sanz, L Gonzalez Y Gonzalez, R Garcia, D Gonzalez, FJ Pacheco and PJ Goodhew | Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers | J Cryst Growth 169 (1996) 649-659 |
| 60 | PJ Goodhew & G MacPherson | Dislocation behaviour in strained layer interfaces | IoP Conf Series 157 (1997) 111-120 invited |
| 61 | K Giannakopoulos & PJ Goodhew | The role of misfit dislocations in the development of surface striations in strained layers | IOM Communications 703 (1998) 22-29 |
| 62 | PJ Goodhew | Dislocations in Strained Layer Interfaces | TMS (1998) 97-106 |
| 63 | G MacPherson & PJ Goodhew | Dislocation blocking in InxGa1-xAs (x<0.2) layers grown on GaAs substrates by strain sensitive etching with aqueous CrO3-HF solutions | Appl Phys Lett 70 (1997) 2873-2875 |
| 64 | R Jothilingam, T Farrell, TB Joyce & PJ Goodhew | Low temperature laser-assisted CBE growth of AlGaAs | J Cryst Growth 188 (1998) 39-44 |
| 65 | K Giannakopoulos & PJ Goodhew | Striation development in CBE-grown vicinal plane InGaAs layers | J Cryst Growth, 188 (1998) 26-31 |
| 66 | PJ Goodhew & K Giannakopoulos | Strain relaxation in III-V semiconductor heterostructures | Micron 30 (1999) 59-64 |
| 67 | PJ Goodhew & K Giannakopoulos | Relaxation and surface morphology of heteroepitaxial layers grown on vicinal plane substrates | TMS, (1999) 131-138 |
| 68 | R Jothilingam, T Farrell, TB Joyce, TJ Bullough & PJ Goodhew | Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thicknesss determination of AlxGa1-xAs | Vacuum, 53 (1999) 7-10 |
| 69 | PJ Goodhew | Dislocation blocking in strained layers grown on vicinal substrates | IOP Conf Ser 164 (1999) 275-278 |
| 70 | HJ Davock, AJ Harvey & PJ Goodhew | The Determination of the Composition of InAs Quantum Dots in a GaAs matrix using STEM | IOP Conf Ser 161 (1999) 613-616 |
| 71 | PJ Goodhew | A model of dislocation blocking and its application to the development of misfit dislocation arrays | Phil Mag A 80 (2000) 2099-2108 |
| 72 | PJ Goodhew | Strain Relaxation in Thin Films: The effect of dislocation blocking | MRS Symp Proc Vol 594 (2000) 93-98 |
| 73 | AJ Harvey, H Davock & PJ Goodhew | High resolution analysis of embedded quantum dots | MRS Symp Proc 583 (2000) 3-8 |
| 74 | AJ Harvey, HJ Davock, A Dunbar, U Bangert & PJ Goodhew | 3-D compositional analysis of quantum dots | J Phys D: Appl Phys 34 (2001) 636-644 |
| 75 | D Zhi, HJ Davock, R Murray, C Roberts, TS Jones, DW Pashley, PJ Goodhew & BA Joyce | Quantitative compositional analysis of InAs/GaAs quantum dots by STEM | J Appl Phys 89 (2001) 2079-2083 |
| 76 | PJ Goodhew | Dislocation blocking in strained layers grown on vicinal substrates | Inst Physics Conf Series 164 (1999) 275-278 |
| 77 | D Zhi, M Wei, RE Dunin-Borkowski, PA Midgeley, TS Jones, BA Joyce, PF Fewster, PJ Goodhew | The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by MBE | Microelectronic Engineering 73-74 (2004) 604-609 |
| 78 | AM Sanchez, M Gass, AL Papworth, PJ Goodhew, P Ruterana | Nanoscale EELS analysis of InGaN/GaN heterostructures | Phys Rev B 70 (2004) 035325 |
| 79 | AM Sanchez, M Gass, AJ Papworth, P Ruterana, HK Cho, PJ Goodhew | Indium fluctuations analysis inside InGaN quantum wells by STEM | Inst Phys Conf Series 179 (2004) 131-134 |
| 80 | D Zhi, PF Fewster, DW Pashley, BA Joyce, PJ Goodhew, TS Jones | Determination of size, shape and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering | Inst Phys Conf Series 180 (2003) 91-94 |
| 81 | A.M. Sánchez, M. Gass, A.J. Papwort, P.J. Goodhew, P. Singh, P. Ruterana, H.K. Cho, R.J. Cho and H.J. Lee | V-defects and dislocations in InGaN/GaN heterostructures | Thin Solid Films 479 (2005) 316-320 |
| 82 | A M Sánchez, R Beanland, M H Gass, A J Papworth, P J Goodhew & M Hopkinson | Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra | Phys Rev B 72, 075339 (2005) |
| 83 | A M Sanchez, P Galindo, S Kret, M Falke, R Beanland & P J Goodhew | An approach to the systematic distortion correction in aberration corrected HAADF images | J Microscopy 221, (2006) 1-7 |
| 84 | P Wang, A L Bleloch, U Falke & P J Goodhew | Geometric aspects of lattice contrast visibility in nanocrystalline poly-si using HAADF STEM | Ultramicroscopy 106, (2006) 277-283 |
| 85 | A M Sanchez, A J Papworth, M H Gass, R Beanland & P J Goodhew | Nanometer-scale strain measurements in semicondutors: an innovative approach using the plasmon peak in electron energy loss spectra | Appl Phys Letters 88, 051917 (2006) |
| 86 | A M Sanchez, P L Galindo, S Kret, M Falke, R Beanland & P J Goodhew | Quantitative strain mapping applied to aberration-corrected HAADF images | Microscopy and Microanalysis 12, (2006) 1-10 |
| 87 | P Wang, A L Bleloch, M Falke, J Ng, Missous M, & P J Goodhew | Direct measurement of composition of buried quantum dots using aberration- corrected STEM | Appl Phys Letters 89, 072111 (2006) |
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