Introduction
Prof Tim Veal leads the Semiconductor Material Physics research within the Stephenson Institute for Renewable Energy at the University of Liverpool. After an MPhys in Mathematics and Physics (1998) and PhD in Semiconductor Surface Electronic Properties at the University of Warwick (2002), he developed research in indium nitride and antimonides as a postdoc at Warwick. He gained an EPSRC Career Acceleration Fellowship (2008-2014) to work on Nitride Photovoltaic Materials for Full Spectrum Utilization before moving to the University of Liverpool as Reader in the Department of Physics in January 2012 and being promoted to Professor in October 2017.
Research expertise- semiconductors for renewable energy
- indium-rich nitride semiconductors
- dilute nitrides and bismides
- earth abundant PV absorbers
- optical and transport properties of semiconductors
- photoemission spectroscopy
- July 2015 - 28th International Conference on Defects in Semiconductors, "Optical properties and defects in GaSbBi and GaNSb alloys"
- July 2015 - UK Surface Analysis Forum Summer Meeting 2015, "Semiconductor Surface Physics, Photovoltaics and 100% Renewable Energy by 2050?"
- May 2015 - Spring E-MRS 2015, "Optical and photoemission studies of earth abundant PV absorbers CuSbS2 and Cu3N"
- October 2013 - AVS 60th International Symposium, "Optoelectronic properties of novel nitride semiconductors"
- March 2013 - APS March Meeting, "Surface electron accumulation layers in oxide semiconductors"
- March 2013 - DPG Spring Meeting, "Surface electron accumulation layers in oxide semiconductors"
- September 2012 - Frontiers in muon spectroscopy, "Hydrogen impurities, native defects and surface states in semiconductors: the role of μSR and the charge neutrality level"
- May 2012 - European MRS, "Growth and optical properties of Ga(In)NSb for long wavelength Applications"
- October 2011 - 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, "Photoemission of quantized electron accumulation layers at semiconductor surfaces"
- "Temperature dependence of the direct bandgap and transport properties of CdO", S. K. Vasheghani Farahani, V. Munoz-Sanjose, J. Zuniga-Perez, C. F. McConville, and T. D. Veal, Appl. Phys. Lett. 102, 022102 (2013)
- "N incorporation in GaInNSb alloys and lattice matching to GaSb", M. J. Ashwin, D. Walker, P. A. Thomas, T. S. Jones, and T. D. Veal, J. Appl. Phys. 113, 033502 (2013)
- "Giant reduction of InN surface electron accumulation: Compensation of surface donors by Mg dopants", W. M. Linhart, J. Chai, R. J. H. Morris, M. G. Dowsett, C. F. McConville, S. M. Durbin, and T. D. Veal, Phys. Rev. Lett. 109, 247605 (2012)
- "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: the case of SnO2 on sapphire", S. K. Vasheghani Farahani, T. D. Veal, A. M. Sanchez, O. Bierwagen, M. E. White, S. Gorfman, P. A. Thomas, J. S. Speck, and C. F. McConville, Phys. Rev. B 86, 245315 (2012)
- "ZnSnN2: A new earth-abundant element semiconductor for solar cells", N. Feldberg, B. Keen, J. D. Aldous, D. O. Scanlon, P. A. Stampe, R. J. Kennedy, R. J. Reeves, T. D. Veal, an. Veal, and S. M. Durbin, Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC) 002524 (2012).
- "Self compensation in highly n-type InN", C. Rauch, F. Tuomisto, P. D. C. King, T. D. Veal, Hai Lu, and W. J. Schaff, Appl. Phys. Lett. 101, 011903 (2012)
- "Topical Review: Conductivity in transparent oxide semiconductors", P. D. C. King and T. D. Veal, J. Phys.: Condens. Matter special issue: Semiconducting Oxides 23, 334214 (2011).